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SI1013CX-T1-GE3 +BOM

P-Channel 20 V 450mA (Ta) 190mW (Ta) Surface Mount SC-89-3

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SI1013CX-T1-GE3 General Description

P-Channel 20 V 450mA (Ta) 190mW (Ta) Surface Mount SC-89-3

Key Features

  • None

    • Application

    SWITCHING

    Specifications

    Series TrenchFET® FET Type P-Channel
    Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V
    Current - Continuous Drain (Id) @ 25°C 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V
    Rds On (Max) @ Id, Vgs 760mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 4.5 V Vgs (Max) ±8V
    Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 10 V Power Dissipation (Max) 190mW (Ta)
    Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
    Base Product Number SI1013

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