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SFS9630

MOSFET PCh/200V/4.4a/0.8Ohm

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SFS9630 General Description

P-Channel 200 V 4.4A (Tc) 33W (Tc) Through Hole TO-220F

Key Features

  • Avalanche Rugged Technology
  • Rugged Gate Oxide Technology
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Lower Leakage Current : 10 mA (Max.) @ VDS = -200V
  • Low RDS(ON) : 0.581 Ω (Typ.)

Specifications

FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 965 pF @ 25 V
Power Dissipation (Max) 33W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole

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Availability: 6396 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $0.410 $0.41
200+ $0.159 $31.80
500+ $0.153 $76.50
1000+ $0.151 $151.00

The prices below are for reference only.

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