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SFS9620

MOSFET P-CH/200V/3A/1.5OHM

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

Key Features

  • Avalanche Rugged Technology
  • Rugged Gate Oxide Technology
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Lower Leakage Current : 10 μA (Max.) @ VDS = -200V
  • Low RDS(ON) : 1.111 Ω (Typ.)

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 3 A Rds On - Drain-Source Resistance 1.5 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 28 W
Channel Mode Enhancement Configuration Single
Fall Time 15 ns Height 16.07 mm
Length 10.36 mm Product Type MOSFET
Rise Time 22 ns Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 33 ns
Typical Turn-On Delay Time 12 ns Width 4.9 mm
Unit Weight 0.068784 oz

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