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See Technical Specifications

SCT3060ALGC11

Power Field-Effect Transistor, 39A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

SCT3060ALGC11
Datasheet:

SCT3060ALGC11 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for SCT3060ALGC11

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SCT3060ALGC11 General Description

Mosfet Module Configuration:Single; Continuous Drain Current Id:39A; Drain Source Voltage Vds:650V; No. Of Pins:3Pins; Rds(On) Test Voltage:18V; Gate Source Threshold Voltage Max:5.6V; Power Dissipation:165W; Product Range:- Rohs Compliant: Yes |Rohm SCT3060ALGC11.

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	53 Weeks, 1 Day	Date Of Intro	2017-03-13
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	650 V
Drain Current-Max (ID)	39 A	Drain-source On Resistance-Max	0.078 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-247
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	265
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	97 A
Surface Mount	NO	Terminal Finish	Tin (Sn)
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	10	Transistor Application	SWITCHING
Transistor Element Material	SILICON CARBIDE	Product Category	MOSFET
REACH	Details	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	39 A	Rds On - Drain-Source Resistance	60 mOhms
Vgs - Gate-Source Voltage	- 4 V, + 22 V	Vgs th - Gate-Source Threshold Voltage	2.7 V
Qg - Gate Charge	58 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	165 W
Channel Mode	Enhancement	Series	SCT3x
Fall Time	21 ns	Forward Transconductance - Min	4.9 S
Product Type	MOSFET	Rise Time	37 ns
Factory Pack Quantity	30	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	34 ns
Typical Turn-On Delay Time	19 ns	Part # Aliases	SCT3060AL
Unit Weight	0.211644 oz