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See Technical Specifications

S70GL02GT11FHI010

NOR Flash Parallel 3V/3.3V 2G-bit 256M x 8/128M x 16 110ns 64-Pin Fortified BGA Tray

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

S70GL02GT11FHI010
Datasheet:

S70GL02GT11FHI010 Datasheet (PDF)
Series:

GL-T
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Models:

Request Free CAD Models for S70GL02GT11FHI010

Email: [email protected]

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S70GL02GT11FHI010 General Description

The S70GL02GT 2-Gb MIRRORBIT™ flash memory device is fabricated on 45-nm MIRRORBIT™ process technology. This device offers a fast page access time of 20 ns with a corresponding random access time of 110 ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption.

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Key Features

CMOS 3.0 V core with versatile I/O
• Two 1024 Mb (S29GL01GT) in a single 64-ball fortified-BGA package (see the S29GL01GT datasheet for full
specifications)
• 45 nm MIRRORBIT™ process technology
• Single supply (VCC) for read/program/erase (2.7 V to 3.6 V)
• Versatile I/O feature
- Wide I/O voltage (VIO): 1.65 V to VCC
• ×8 and ×16 data bus
• 16-word/32-byte page read buffer
• 512-byte programming buffer
- Programming in page multiples, up to a maximum of 512 bytes
• Sector erase
- Uniform 128-KB sectors
- S70GL02GT: 2048 sectors
• Suspend and Resume commands for program and erase operations
• Status Register, data polling, and ready/busy pin methods to determine device status
• Advanced sector protection (ASP)
- Volatile and non-volatile protection methods for each sector
• Separate 1024-bye one time program (OTP) array with two lockable regions
- Each device supports common flash interface (CFI)
• WP# input
- Protects the last sector of the device, regardless of sector protection settings
Performance characteristics
• Temperature range/grade
- Industrial (–40°C to +85°C)
- Industrial Plus (–40°C to +105°C)
- Automotive, AEC-Q100 grade 3 (–40°C to +85°C)
- Automotive, AEC-Q100 grade 2 (–40°C to +105°C)
• 100,000 program-erase cycles
• 20-year data retention
• Packaging options
- 64-ball LSH fortified BGA, 13 mm × 11 mm

Specifications

Category	Integrated Circuits (ICs)MemoryMemory	Series	GL-T
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH - NOR	Memory Size	2Gbit
Memory Organization	256M x 8, 128M x 16	Memory Interface	Parallel
Write Cycle Time - Word, Page	-	Access Time	110 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	S70GL02
RHoS	yes	PBFree	yes
HalogenFree	yes	Product Category	NOR Flash
Mounting Style	SMD/SMT	Supply Voltage - Min	2.7 V
Supply Voltage - Max	3.6 V	Active Read Current - Max	160 mA
Interface Type	Parallel	Organization	256 M x 8/128 M x 16
Data Bus Width	8 bit/16 bit	Timing Type	Asynchronous
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Moisture Sensitive	Yes	Product Type	NOR Flash
Factory Pack Quantity	1800	Subcategory	Memory & Data Storage
Tradename	MirrorBit Eclipse