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S29GL01GS10DHI010 +BOM

FLASH - NOR Memory IC 1Gbit Parallel 100 ns 64-FBGA (9x9)

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FLASH - NOR Memory IC 1Gbit Parallel 100 ns 64-FBGA (9x9)

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Access Time-Max	100 ns	Additional Feature	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES
Alternate Memory Width	1	Command User Interface	YES
Common Flash Interface	YES	Data Polling	YES
Data Retention Time-Min	2	Endurance	100000 Write/Erase Cycles
JESD-30 Code	S-PBGA-B64	JESD-609 Code	e1
Length	9 mm	Memory Density	1073741824 bit
Memory IC Type	FLASH	Memory Width	8
Moisture Sensitivity Level	3	Number of Functions	1
Number of Sectors/Size	1K	Number of Terminals	64
Number of Words	134217728 words	Number of Words Code	128000000
Operating Mode	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	128MX8
Output Characteristics	3-STATE	Page Size	32 words
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	260
Programming Voltage	3 V	Ready/Busy	YES
Seated Height-Max	1.4 mm	Sector Size	128K
Standby Current-Max	0.0001 A	Supply Current-Max	0.1 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Terminal Finish	TIN SILVER COPPER
Terminal Form	BALL	Terminal Pitch	1 mm
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	30
Toggle Bit	YES	Type	NAND TYPE
Width	9 mm