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RSR030N06TL +BOM

30N06TL - Transistor

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RSR030N06TL General Description

N-Channel 60 V 3A (Ta) 540mW (Ta) Surface Mount TSMT3

Key Features

  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Low input capacitance
  • Designed for use in power management applications
  • Compact and lightweight package
  • High reliability and durability

Application

  • Motor control
  • Power management systems
  • Solar inverters
  • Battery management systems
  • Uninterruptible power supplies
  • Electric vehicle chargers

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 3 A Rds On - Drain-Source Resistance 85 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1 W
Channel Mode Enhancement Series RSR030N06
Configuration Single Fall Time 10 ns
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel MOSFET Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 8 ns Part # Aliases RSR030N06
Unit Weight 0.000423 oz

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