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RGTV60TK65GVC11 +BOM

IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT

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IGBT Trench Field Stop 650 V 33 A 76 W Through Hole TO-3PFM

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	Trench Field Stop	Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	33 A	Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A	Power - Max	76 W
Switching Energy	570µJ (on), 500µJ (off)	Input Type	Standard
Gate Charge	64 nC	Td (on/off) @ 25°C	33ns/105ns
Test Condition	400V, 30A, 10Ohm, 15V	Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole	Base Product Number	RGTV60
Product Category:	IGBT Transistors	Technology:	Si
Mounting Style:	Through Hole	Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V	Collector-Emitter Saturation Voltage:	1.5 V
Maximum Gate Emitter Voltage:	- 30 V, 30 V	Continuous Collector Current at 25 C:	33 A
Pd - Power Dissipation:	76 W	Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C	Packaging:	Tube
Continuous Collector Current Ic Max:	33 A	Gate-Emitter Leakage Current:	200 nA
Product Type:	IGBT Transistors	Factory Pack Quantity:	30
Subcategory:	IGBTs	Part # Aliases:	RGTV60TK65