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RGS30TSX2GC11 +BOM
IGBT Transistors 10us Short-Circuit Tolerance, 1200V 15A, Field Stop Trench IGBT
BGA-
Manufacturer:
-
Mfr.Part #:
RGS30TSX2GC11
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Datasheet:
-
Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
1.2 kV
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EDA/CAD Models:
Availability: 5756 PCS
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RGS30TSX2GC11 General Description
IGBT Trench Field Stop 1200 V 30 A 267 W Through Hole TO-247N
Specifications
Product Category: | IGBT Transistors | Technology: | Si |
Mounting Style: | Through Hole | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1.2 kV | Collector-Emitter Saturation Voltage: | 2.1 V |
Maximum Gate Emitter Voltage: | - 30 V, 30 V | Continuous Collector Current at 25 C: | 30 A |
Pd - Power Dissipation: | 267 W | Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 175 C | Packaging: | Tube |
Continuous Collector Current Ic Max: | 15 A | Gate-Emitter Leakage Current: | 500 nA |
Product Type: | IGBT Transistors | Factory Pack Quantity: | 30 |
Subcategory: | IGBTs | Part # Aliases: | RGS30TSX2 |
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In Stock: 5,756
Minimum Order: 1
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