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QJD1210010 +BOM

Mosfet Array 1200V (1.2kV) 100A (Tc) 1080W Chassis Mount Module

QJD1210010 General Description

Mosfet Array 1200V (1.2kV) 100A (Tc) 1080W Chassis Mount Module

Specifications

Technology Silicon Carbide (SiC) Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 25mOhm @ 100A, 20V Vgs(th) (Max) @ Id 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 500nC @ 20V Input Capacitance (Ciss) (Max) @ Vds 10200pF @ 800V
Power - Max 1080W Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount Base Product Number QJD1210

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