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QH8MA2TCR +BOM

MOSFET 30V Nch+Pch Power MOSFET

QH8MA2TCR General Description

Mosfet Array 30V 4.5A, 3A 1.25W Surface Mount TSMT8

Rohm Semiconductor Inventory

Application

SWITCHING

Specifications

Technology MOSFET (Metal Oxide) Configuration N and P-Channel
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.5A, 3A Rds On (Max) @ Id, Vgs 35mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 365pF @ 10V Power - Max 1.25W
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Base Product Number QH8MA2

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