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See Technical Specifications

PMBD914,215

High-speed switching diode

Manufacturer:

NXP Semiconductors
Mfr.Part #:

PMBD914,215
Datasheet:

PMBD914,215 Datasheet (PDF)
Technology:

Standard
Voltage - DC Reverse (Vr) (Max):

100 V
Current - Average Rectified (Io):

215mA
Voltage - Forward (Vf) (Max) @ If:

1.25 V @ 150 mA
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PMBD914,215 General Description

High-speed switching diode, fabricated in planar technology, and encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Key Features

High switching speed: trr ≤ 4 ns
Low capacitance: Cd ≤ 1.5 pF
Low leakage current
Reverse voltage: VR ≤ 100 V
Repetitive peak reverse voltage: VRRM ≤ 100 V
Small SMD plastic package
AEC-Q101 qualified

Application

High-speed switching

Specifications

Technology	Standard	Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io)	215mA	Voltage - Forward (Vf) (Max) @ If	1.25 V @ 150 mA
Speed	Fast Recovery =< 500ns, > 200mA (Io)	Reverse Recovery Time (trr)	4 ns
Current - Reverse Leakage @ Vr	1 µA @ 75 V	Capacitance @ Vr, F	1.5pF @ 0V, 1MHz
Mounting Type	Surface Mount	Operating Temperature - Junction	150°C (Max)
Base Product Number	PMBD914