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See Technical Specifications

PD4M440H +BOM

Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Manufacturer:

KYOCERA
Mfr.Part #:

PD4M440H
Datasheet:

PD4M440H Datasheet (PDF)
Part Life Cycle Code:

Transferred
ECCN Code:

EAR99
Case Connection:

ISOLATED
Configuration:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

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Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Life Cycle Code	Transferred	Reach Compliance Code
ECCN Code	EAR99	Case Connection	ISOLATED
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	DS Breakdown Voltage-Min	500 V
Drain Current-Max (ID)	21 A	Drain-source On Resistance-Max	0.21 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-XUFM-X7
Number of Elements	2	Number of Terminals	7
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	60 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	UNSPECIFIED	Terminal Position	UPPER
Transistor Application	SWITCHING	Transistor Element Material	SILICON