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PBSS4160PANP,115
Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz 510mW Surface Mount 6-HUSON (2x2)
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Manufacturer:
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Mfr.Part #:
PBSS4160PANP,115
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Datasheet:
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Mounting Style:
SMD/SMT
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Transistor Polarity:
NPN, PNP
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Configuration:
Dual
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Collector- Emitter Voltage VCEO Max:
60 V
Availability: 5903 PCS
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PBSS4160PANP,115 General Description
NPN/PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.
Key Features
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High efficiency due to less heat generation
- AEC-Q101 qualified
Application
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
Specifications
Product Category | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
Transistor Polarity | NPN, PNP | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 60 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 90 mV, 125 mV |
Maximum DC Collector Current | 1 A | Pd - Power Dissipation | 2 W |
Gain Bandwidth Product fT | 175 MHz, 125 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current | 1 A |
DC Collector/Base Gain hfe Min | 290, 245 | DC Current Gain hFE Max | 430, 245 |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 3000 |
Subcategory | Transistors | Technology | Si |
Part # Aliases | 934066888115 | Unit Weight | 0.000250 oz |
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Availability: 5903 PCS
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