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PBSS4160PANP,115

Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz 510mW Surface Mount 6-HUSON (2x2)

  • Manufacturer:

    Nexperia

  • Mfr.Part #:

    PBSS4160PANP,115

  • Datasheet:

    PBSS4160PANP,115 Datasheet (PDF) pdf-icon

  • Mounting Style:

    SMD/SMT

  • Transistor Polarity:

    NPN, PNP

  • Configuration:

    Dual

  • Collector- Emitter Voltage VCEO Max:

    60 V

PBSS4160PANP,115 General Description

NPN/PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.

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Key Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • High efficiency due to less heat generation
  • AEC-Q101 qualified
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Application

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
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Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN, PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 90 mV, 125 mV
Maximum DC Collector Current 1 A Pd - Power Dissipation 2 W
Gain Bandwidth Product fT 175 MHz, 125 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Continuous Collector Current 1 A
DC Collector/Base Gain hfe Min 290, 245 DC Current Gain hFE Max 430, 245
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Part # Aliases 934066888115 Unit Weight 0.000250 oz

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Availability: 5903 PCS

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