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OPA2317IDR +BOM

Dual, Low Offset, Rail-to-Rail I/O Operational Amplifier

OPA2317IDR General Description

The OPA317 series of CMOS operational amplifiers offer precision performance at a very competitive price. These devices are members of the Zerø-Drift family of amplifiers that use a proprietary autocalibration technique to simultaneously provide low offset voltage (90 µV maximum) and near-zero drift over time and temperature at only 35 µA (maximum) of quiescent current.

The OPA317 family features rail-to-rail input and output in addition to near flat 1/f noise, making this amplifier ideal for many applications, and much easier to design into a system. These devices are optimized for low-voltage operation as low as 1.8 V (\xC2±0.9 V) and up to 5.5 V (±2.75 V).

The OPA317 (single version) is available in the SC70-5, SOT23-5, and SOIC-8 packages. The OPA2317 (dual version) is offered in the VSSOP-8 and SOIC-8 packages. The OPA4317 is offered in the standard SOIC-14 and TSSOP-14 packages. All versions are specified for operation from –40°C to 125°C.

Key Features

  • Supply Voltage: 1.8 V to 5.5 V
  • microPackages:
    • Single: SOT23-5, SC-70, SOIC-8
    • Dual: VSSOP-8, SOIC-8
    • Quad: SOIC-14, TSSOP-14
  • Low Offset Voltage: 20 µV (Typical)
  • CMRR: 108-dB (Typical) PSRR
  • Quiescent Current: 35 µA (Maximum)
  • Gain Bandwidth: 300 kHz
  • Rail-to-Rail Input and Output
  • Internal EMI and RFI Filtering

Specifications

Source Content uid OPA2317IDR Pbfree Code Yes
Part Life Cycle Code Active Pin Count 8
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8542.33.00.01 Amplifier Type OPERATIONAL AMPLIFIER
Frequency Compensation YES JESD-30 Code R-PDSO-G8
Low-Bias NO Low-Offset YES
Micropower YES Moisture Sensitivity Level 1
Number of Functions 2 Number of Terminals 8
Packing Method TR Peak Reflow Temperature (Cel) 260
Power NO Programmable Power NO
Surface Mount YES Technology CMOS
Temperature Grade AUTOMOTIVE Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Voltage Gain-Min 100000
Wideband NO Number of channels 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.8
Vos (offset voltage at 25°C) (max) (mV) 0.09 GBW (typ) (MHz) 0.3
Features EMI Hardened, Zero Drift Slew rate (typ) (V/µs) 0.15
Rail-to-rail In, Out Offset drift (typ) (µV/°C) 0.05
Iq per channel (typ) (mA) 0.021 Vn at 1 kHz (typ) (nV√Hz) 55
CMRR (typ) (dB) 108 Rating Catalog
Operating temperature range (°C) -40 to 125 Iout (typ) (A) 0.005
Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.1
Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 0.03
Output swing headroom (to positive supply) (typ) (V) -0.03

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