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See Technical Specifications

NXV65HR82DS1

Power Driver Module MOSFET H-Bridge 650 V 26 A 16-SSIP Exposed Pad, Formed Leads

Manufacturer:

onsemi
Mfr.Part #:

NXV65HR82DS1
Datasheet:

NXV65HR82DS1 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number of Channels:

4 Channel

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

NXV65HR82DS1 General Description

On-Board Charger H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter. 82mΩ SuperFET3 H-Bridge on Al²O³ DBC substrate with 5 kV isolation in a compact APM16 transfer molded module.

Key Features

SIP or DIP H−Bridge Power Module for On−board Charger (OBC) in EV−PHEV
High Voltage Snubber Capacitor for Low Noise at High Voltage Battery
5 kV/1 sec Electrically Isolated Substrate for Easy Assembly
Compact Design for Low Total Resistance
Module Serialization for Full Traceability
Lead Free, RoHS and UL94V−0 Compliant
Automotive Qualified per AEC Q101 and AQG324 Guidelines

Application

DC-DC Converter for On-Board Charger in EV or PHEV

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	4 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	26 A	Rds On - Drain-Source Resistance	82 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	5 V
Qg - Gate Charge	79.7 nC	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C	Pd - Power Dissipation	126 W
Channel Mode	Enhancement	Product Type	MOSFET
Factory Pack Quantity	72	Subcategory	MOSFETs