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NXH006P120MNF2PTG
Silicon Carbide (SiC) Module - EliteSiC, 6 mohm SiC MOSFET, 1200 V, Half Bridge 2-PACK, F2 Package
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Manufacturer:
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Mfr.Part #:
NXH006P120MNF2PTG
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Datasheet:
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Case Outline:
180BY
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MSL Temp (°C):
0
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Container Type:
BTRAY
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EDA/CAD Models:
Availability: 7734 PCS
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NXH006P120MNF2PTG General Description
The NXH006P120MNF2 is a half-bridge or 2-PACK EliteSiC Module with 2 6mohm 1200V SiC MOSFET switches and a thermistor in an F2 package. The SiC MOSFET switches use M1 technology and are driven with 18V-20V gate drive.
Key Features
- Robust M1 planar SiC MOSFET technology
- 18V to 20V gate drive
Application
- DC-AC conversion
- DC-DC conversion
- AC-DC conversion
Specifications
Status | Active | Case Outline | 180BY |
MSL Temp (°C) | 0 | Container Type | BTRAY |
Service Policies and Others
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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NXH006P120MNF2PTG Datasheet PDF
NXH006P120MNF2PTG PDF Preview
Availability: 7734 PCS
+BOMQty. | Unit Price | Ext. Price |
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