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NTGD4167CT1G +BOM

Mosfet Array 30V 2.6A, 1.9A 900mW Surface Mount 6-TSOP

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NTGD4167CT1G General Description

Mosfet Array 30V 2.6A, 1.9A 900mW Surface Mount 6-TSOP

Key Features

  • Complementary N−Channel and P−Channel MOSFET
  • Small Size (3 x 3 mm) Dual TSOP-6 Package
  • Leading Edge Trench Technology for Low On Resistance
  • Reduced Gate Charge to Improve Switching Response
  • Idependently Connected Devices to Provides Design Flexibility

Application

  • DC-DC Conversion Circuits
  • Load/Power Switching with Level Shift

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 2.6 A, 1.9 A Rds On - Drain-Source Resistance 90 mOhms, 300 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 500 mV
Qg - Gate Charge 3.7 nC, 3.9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.1 W
Channel Mode Enhancement Series NTGD4167C
Configuration Dual Fall Time 2 ns, 8 ns
Forward Transconductance - Min 2.6 S, 2.6 S Height 0.94 mm
Length 3 mm Product MOSFET Small Signal
Product Type MOSFET Rise Time 4 ns, 8 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 14 ns, 22 ns
Typical Turn-On Delay Time 7 ns, 8 ns Width 1.5 mm
Unit Weight 0.000705 oz

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