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NTE199 +BOM

Trans GP BJT NPN 50V 0.1A 3-Pin TO-92

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NTE199 General Description

Bipolar (BJT) Transistor NPN 50 V 100 mA 360 mW Through Hole TO-92

Specifications

Part Life Cycle Code Active Reach Compliance Code
ECCN Code EAR99 Additional Feature LOW NOISE
Collector Current-Max (IC) 0.1 A Collector-Emitter Voltage-Max 50 V
Configuration SINGLE DC Current Gain-Min (hFE) 400
JEDEC-95 Code TO-92 JESD-30 Code O-PBCY-W3
Number of Elements 1 Number of Terminals 3
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.36 W Qualification Status Not Qualified
Surface Mount NO Terminal Form WIRE
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER Transistor Element Material SILICON
Transition Frequency-Nom (fT) 90 MHz

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