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NTE163A +BOM

Bipolar (BJT) Transistor NPN 700 V 5 A 4MHz 12.5 W Through Hole TO-3

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NTE163A General Description

Bipolar (BJT) Transistor NPN 700 V 5 A 4MHz 12.5 W Through Hole TO-3

Specifications

Series - Transistor Type NPN
Current - Collector (Ic) (Max) 5 A Voltage - Collector Emitter Breakdown (Max) 700 V
Vce Saturation (Max) @ Ib, Ic 5V @ 2A, 4.5A Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 2.25 @ 4.5A, 5V Power - Max 12.5 W
Frequency - Transition 4MHz Operating Temperature -65°C ~ 115°C (TJ)
Mounting Type Through Hole

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