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NTE128P

Bipolar (BJT) Transistor NPN 80 V 1 A 50MHz 850 mW Through Hole TO-237

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NTE128P General Description

Bipolar (BJT) Transistor NPN 80 V 1 A 50MHz 850 mW Through Hole TO-237

Specifications

Part Life Cycle Code Active Pin Count 3
Reach Compliance Code ECCN Code EAR99
Collector Current-Max (IC) 1 A Collector-Emitter Voltage-Max 80 V
Configuration SINGLE DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-237AA JESD-30 Code O-PBCY-T3
Number of Elements 1 Number of Terminals 3
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 1 W Qualification Status Not Qualified
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 50 MHz Transistor Type NPN
Current - Collector (Ic) (Max) 1 A Voltage - Collector Emitter Breakdown (Max) 80 V
Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 350mA, 2V
Power - Max 850 mW Frequency - Transition 50MHz
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole

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Availability: 5955 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $8.214 $8.21
200+ $3.278 $655.60
500+ $3.169 $1,584.50
1000+ $3.114 $3,114.00

The prices below are for reference only.

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