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NTE102

Bipolar (BJT) Transistor PNP 24 V 150 mA 150 mW Through Hole TO-5

  • Manufacturer:

    NTE Electronics, Inc

  • Mfr.Part #:

    NTE102

  • Datasheet:

    NTE102 Datasheet (PDF) pdf-icon

  • Transistor Type:

    PNP

  • Current - Collector (Ic) (Max):

    150 mA

  • Voltage - Collector Emitter Breakdown (Max):

    24 V

  • Vce Saturation (Max) @ Ib, Ic:

    200mV @ 1mA, 24mA

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NTE102 General Description

Bipolar (BJT) Transistor PNP 24 V 150 mA 150 mW Through Hole TO-5

Specifications

Series - Transistor Type PNP
Current - Collector (Ic) (Max) 150 mA Voltage - Collector Emitter Breakdown (Max) 24 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 1mA, 24mA Current - Collector Cutoff (Max) 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 12mA, 150mV Power - Max 150 mW
Frequency - Transition - Operating Temperature -65°C ~ 100°C (TJ)
Mounting Type Through Hole

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