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See Technical Specifications

NSR05T40P2T5G

500 mA, 40 V, Schottky Barrier Diode

Manufacturer:

onsemi
Mfr.Part #:

NSR05T40P2T5G
Datasheet:

NSR05T40P2T5G Datasheet (PDF)
Technology:

Schottky
Voltage - DC Reverse (Vr) (Max):

40 V
Current - Average Rectified (Io):

500mA
Voltage - Forward (Vf) (Max) @ If:

700 mV @ 500 mA
EDA/CAD Models:

Request Free CAD Models for NSR05T40P2T5G

Email: [email protected]

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Tel: +852 95804164

NSR05T40P2T5G General Description

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in space saving micro-packaging ideal for space constraint applications.

Key Features

Low Forward Voltage Drop - 580 mV (Typ.) @ I_F = 500 mA
Low Reverse Current - 2.0 uA (Typ.) @ V_R = 40 V
500 mA of Continuous Forward Current
High ESD Rating: HBM - Class 3B; CDM - Class IV
High Switching Speed
These Devices are Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Application

LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost DC-DC Converters
Reverse Voltage and Current Protection
Clamping & Protection

Specifications

Technology	Schottky	Voltage - DC Reverse (Vr) (Max)	40 V
Current - Average Rectified (Io)	500mA	Voltage - Forward (Vf) (Max) @ If	700 mV @ 500 mA
Speed	Fast Recovery =< 500ns, > 200mA (Io)	Reverse Recovery Time (trr)	8 ns
Current - Reverse Leakage @ Vr	55 µA @ 40 V	Capacitance @ Vr, F	29pF @ 4V, 1MHz
Mounting Type	Surface Mount	Operating Temperature - Junction	-55°C ~ 150°C
Base Product Number	NSR05