This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

MRFE6VP61K25HR5

Tape & Reel (TR) N-CHANNEL EAR99 MRFE6VP61K25 RF Mosfet 100mA 1250W 24dB 230MHz

Manufacturer:

NXP Semiconductor
Mfr.Part #:

MRFE6VP61K25HR5
Datasheet:

MRFE6VP61K25HR5 Datasheet (PDF)
f<sub>i(RF)</sub> [max] (MHz):

600
Number of pins:

4
Amp Class:

AB
Test Signal:

1-TONE
EDA/CAD Models:

Request Free CAD Models for MRFE6VP61K25HR5

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

MRFE6VP61K25HR5 General Description

RF TRANSISTOR, N CH, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-

Key Features

Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V

Specifications

f<sub>i(RF)</sub> [max] (MHz)	600	Number of pins	4
Amp Class	AB	Test Signal	1-TONE
Supply Voltage (Typ) (V)	50	Class	AB
Die Technology	LDMOS	Thermal Resistance (Spec) (℃/W)	0.15
P1dB (Typ) (dBm)	61	Security Status	COMPANY PUBLIC
Frequency (Min-Max) (MHz)	1.8,600	Efficiency (Typ) (%)	74.6
Peak Power (Typ) (W)	1600	Frequency Band (Hz)	1800000,600000000
Description	Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V	f<sub>i(RF)</sub> [min] (MHz)	1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal	1250 @ CW	P1dB (Typ) (W)	1250
Gain (Typ) (dB)	22.9	Power Gain (Typ) (dB) @ f (MHz)	22.9 @ 230
Frequency (Max) (MHz)	600	Frequency (Min) (MHz)	1.8
Frequency (Min-Max) (GHz)	0.0018000001 to 0.6	f<sub>range</sub> [max] (MHz)	600
f<sub>range</sub> [min] (MHz)	1.8	Rth(j-a) (K/W)	0.15
Matching	unmatched	Modes of Operation	single-tone modulation