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MRFE6VP5300NR1 +BOM

RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 230 MHz, 50 V, LDMOS, SOT1736

MRFE6VP5300NR1 General Description

RF FET, 140V, 909W, 1.8MHZ-600MHZ; Drain Source Voltage Vds: 140V; Continuous Drain Current Id: -; Power Dissipation Pd: 909W; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: TO-270WB; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

NXP Semiconductor Inventory

Key Features

WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
NXP Semiconductor Original Stock
NXP Semiconductor Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs Series -
Technology LDMOS Configuration Dual
Frequency 1.8MHz ~ 600MHz Gain 27dB
Voltage - Test 50 V Current Rating (Amps) -
Noise Figure - Current - Test 100 mA
Power - Output 300W Voltage - Rated 133 V
Mounting Type Surface Mount Base Product Number MRFE6

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Ratings and Reviews

More
S
S**l 11/24/2023

Seller respect!On may 1 ordered, on may 9 the parcel arrived in moscow, on may 24 received a notification from the post office and took it.Replaced the chip in the amplifier, everything works!Maybe not quite right, it was necessary 1 pc. To change burned in the amplifier, but than to look for markets, i thought it was easier to order 20 pcs for 59,22 rubles. And pay as much for speed. Total repair cost 108 rubles.

13
D
D**n 05/30/2022

Received 10pcs LM317. Didn’t tested yet!

7
F
F**s 04/04/2022

Went sooo long, but got it. The road took almost 1 week. For this in fact and took off the star

11
M
M**h 06/18/2021

The pronduct is fine, but the packaging was not sufficient. Two of the components fell off. I could solder them again. I could not check the function yet.

4

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MRFE6VP5300NR1 Datasheet PDF

Preliminary Specification MRFE6VP5300NR1 PDF Download

MRFE6VP5300NR1 PDF Preview

In Stock: 7,070

Minimum Order: 1

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