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MRFE6VP5300GNR1

RF Mosfet 50 V 100 mA 1.8MHz ~ 600MHz 27dB 300W TO-270 WB-4 Gull

MRFE6VP5300GNR1 General Description

RF Mosfet 50 V 100 mA 1.8MHz ~ 600MHz 27dB 300W TO-270 WB-4 Gull

NXP Semiconductor Inventory

Key Features

WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
NXP Semiconductor Original Stock
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Specifications

f<sub>i(RF)</sub> [max] (MHz) 600 Number of pins 4
Amp Class AB Test Signal CW
Supply Voltage (Typ) (V) 50 Class AB
Die Technology LDMOS Thermal Resistance (Spec) (&#8451;/W) 0.22
P1dB (Typ) (dBm) 54.8 Security Status COMPANY PUBLIC
Frequency (Min-Max) (MHz) 1.8,600 Efficiency (Typ) (%) 70
Peak Power (Typ) (W) 375 Frequency Band (Hz) 1800000,600000000
Description WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V f<sub>i(RF)</sub> [min] (MHz) 1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 300 @ CW P1dB (Typ) (W) 300
Gain (Typ) (dB) 25 Power Gain (Typ) (dB) @ f (MHz) 25 @ 230
Frequency (Max) (MHz) 600 Frequency (Min) (MHz) 1.8
Frequency (Min-Max) (GHz) 0.0018000001 to 0.6 f<sub>range</sub> [max] (MHz) 600
f<sub>range</sub> [min] (MHz) 1.8 Rth(j-a) (K/W) 0.22
Matching unmatched Modes of Operation continuous wave
Product Category RF MOSFET Transistors Technology Si
Moisture Sensitive Yes Product Type RF MOSFET Transistors
Series MRFE6VP5300N Factory Pack Quantity 500
Subcategory MOSFETs Transistor Type LDMOS FET
Type RF Power MOSFET Part # Aliases 935320438528
Unit Weight 0.057666 oz

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MRFE6VP5300GNR1 Datasheet PDF

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