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See Technical Specifications

MPSA55 +BOM

Bipolar (BJT) Transistor PNP 60 V 500 mA 50MHz 625 mW Through Hole TO-92 (TO-226)

Manufacturer:

onsemi
Mfr.Part #:

MPSA55
Datasheet:

MPSA55 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

PNP
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

60 V
EDA/CAD Models:

Request Free CAD Models for MPSA55

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Tel: +852 95804164

MPSA55 General Description

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Key Features

Pb-Free Packages are Available

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	4 V	Collector-Emitter Saturation Voltage	250 mV
Maximum DC Collector Current	500 mA	Pd - Power Dissipation	625 W
Gain Bandwidth Product fT	50 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	500 mA
Height	5.33 mm	Length	5.2 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	5000
Subcategory	Transistors	Technology	Si
Width	4.19 mm	Unit Weight	0.007090 oz