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MGD3160AM315EK

EV Inverter Control; IGBT & SiC GDIC

Manufacturer:

NXP Semiconductor
Mfr.Part #:

MGD3160AM315EK
Datasheet:

MGD3160AM315EK Datasheet (PDF)
Device Function:

HV Isolated IGBT & SiC Single gate driver IC
Logic Level (V):

3.3
Frequency (Max) (kHz):

100
Load Current (IL) [TYP] (A):

15
EDA/CAD Models:

Request Free CAD Models for MGD3160AM315EK

Email: [email protected]

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MGD3160AM315EK General Description

GD3160 silicon and enablement (documentation, software and boards) are available for selected customers (NDA required). For additional information and sample availabilitycontact support or your local sales representative.The GD3160 is an improved, advanced single-channel high-voltage isolated gate driver with enhanced features for driving and protecting silicon carbide (SiC) MOSFETs and functional safety.The GD3160's SPI programmable drive, protection and fault reporting features allow users to optimize conditions for driving and protecting almost any SiC MOSFET or Si IGBT power switch.ISO 26262 compliant and automotive qualified, the GD3160 integrates BOM saving and functional safety features to support implementing ASIL D compliant and power density efficient xEV inverter solutions.

Key Features

EV Inverter Control; IGBT & SiC GDIC

Application

Automotive
Industrial

Specifications

Device Function	HV Isolated IGBT & SiC Single gate driver IC	Logic Level (V)	3.3
Frequency (Max) (kHz)	100	Load Current (IL) [TYP] (A)	15
Number of Channels	1	Protection	desaturation,overtemperature,real time monitor,segmented drive,short-circuit,two-level turn off,undervoltage
Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON))	500	Load Supply Voltage (Min) (V)	-12
Load Supply Voltage (Max) (V)	25	Supply Voltage [min] (V)	4.5
Supply Voltage [max] (V)	40	Interface and Input Control	SPI / PWM
SPI [bits]	24	Ambient Operating Temperature (Min to Max) (℃)	-40 to 125
ASIL Certification	up to ASIL-D