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LSIC1MO120G0025

N-Channel 1200 V 100A (Tc) 500W (Tc) Through Hole TO-247-4L

Manufacturer:

Littelfuse Inc.
Mfr.Part #:

LSIC1MO120G0025
Datasheet:

LSIC1MO120G0025 Datasheet (PDF)
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):

1200 V
Current - Continuous Drain (Id) @ 25°C:

100A (Tc)
EDA/CAD Models:

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LSIC1MO120G0025 General Description

Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance.

Key Features

Positive temperature coefficient
175ºC maximum operating junction temperature
Fast and low losses switching, MOSFETs optimized for high frequency switching
SiC diodes with nearly zero reverse recovery current
Dedicated Kelvin connection to source
Low RthJC

Application

Boost diodes in PFC or DC/DC stages
Switch-mode power supplies
Uninterruptible power supplies
Solar inverters
EV charging stations

Specifications

FET Type	N-Channel	Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V	Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V	Rds On (Max) @ Id, Vgs	32mOhm @ 50A, 20V
Vgs(th) (Max) @ Id	4V @ 30mA	Gate Charge (Qg) (Max) @ Vgs	265 nC @ 20 V
Vgs (Max)	+22V, -6V	Input Capacitance (Ciss) (Max) @ Vds	495 pF @ 800 V
Power Dissipation (Max)	500W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Base Product Number	LSIC1MO120