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LM74610QDGKRQ1 +BOM

0.48-V to 42-V, zero IQ automotive ideal diode controller

Manufacturer:

TI
Mfr.Part #:

LM74610QDGKRQ1
Datasheet:

LM74610QDGKRQ1 Datasheet (PDF)
Vin (min) (V):

0.48
Vin (max) (V):

42
Number of channels:

1
Features:

Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection
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LM74610QDGKRQ1 General Description

The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.

Key Features

Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
- Exceeds HBM ESD Classification Level 2
- Device CDM ESD Classification Level C4B
Maximum reverse voltage of 45 V
No Positive Voltage limitation to Anode Terminal
Charge Pump Gate Driver for External N-Channel
MOSFET
Lower Power Dissipation than Schottky
Diode/PFET Solutions
Low Reverse Leakage Current
Zero IQ
Fast 2-µs Response to Reverse Polarity
–40°C to +125°C Operating Ambient Temperature
Can be Used in OR-ing Applications
Meets CISPR25 EMI Specification
Meets Automotive ISO7637 Transient
Requirements with a Suitable TVS Diode
No Peak Current Limit

Specifications

Vin (min) (V)	0.48	Vin (max) (V)	42
Number of channels	1	Features	Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection
Iq (typ) (mA)	0	Iq (max) (mA)	0
FET	External single FET	IGate source (typ) (µA)	10
IGate source (max) (µA)	9.4	IGate sink (typ) (mA)	0.01
IGate pulsed (typ) (A)	0.1	Operating temperature range (°C)	-40 to 125
IReverse (typ) (µA)	110	VSense reverse (typ) (mV)	20
Design support	EVM	Rating	Automotive
Imax (A)	1.5	VGS (max) (V)	2.5
Device type	Ideal diode controller	Product type	Ideal diode controller