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KSC5026MOS

NPN Silicon Transistor

email Email: [email protected]
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tel Tel: +852 95804164

KSC5026MOS General Description

Bipolar (BJT) Transistor NPN 800 V 1.5 A 15MHz 20 W Through Hole TO-126-3

KSC5026MOS

Key Features

  • High Speed Switching
  • Wide SOA
  • High Voltage and High Reliability

Application

  • This product is general usage and suitable for many different applications.

Specifications

Transistor Type NPN Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 800 V Vce Saturation (Max) @ Ib, Ic 2V @ 150mA, 750mA
Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA, 5V
Power - Max 20 W Frequency - Transition 15MHz
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Base Product Number KSC5026

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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