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KSC3502ESTU
Bipolar (BJT) Transistor NPN 200 V 100 mA 150MHz 1.2 W Through Hole TO-126-3
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Manufacturer:
onsemi
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Mfr.Part #:
KSC3502ESTU
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Datasheet:
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Transistor Type:
NPN
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Current - Collector (Ic) (Max):
100 mA
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Voltage - Collector Emitter Breakdown (Max):
200 V
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Vce Saturation (Max) @ Ib, Ic:
600mV @ 2mA, 20mA
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EDA/CAD Models:
Availability: 9096 PCS
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KSC3502ESTU General Description
Bipolar (BJT) Transistor NPN 200 V 100 mA 150MHz 1.2 W Through Hole TO-126-3
Specifications
Series | - | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 100 mA | Voltage - Collector Emitter Breakdown (Max) | 200 V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA | Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V | Power - Max | 1.2 W |
Frequency - Transition | 150MHz | Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | KSC3502 |
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Availability: 9096 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for KSC3502ESTU, guaranteed quotes back within 12hr.