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KSC1008OBU

NPN Epitaxial Silicon Transistor

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

KSC1008OBU General Description

Bipolar (BJT) Transistor NPN 60 V 700 mA 50MHz 800 mW Through Hole TO-92-3

Key Features

  • Low Frequency amplifier medium speed switching
  • High Collector-Base Voltage : VCBO=80V
  • Collector Current : IC =700mA
  • Collector Power Dissipation : PC=800mW
  • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
  • NonSuffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector)
  • Complement to KSA708

Application

  • This product is general usage and suitable for many different applications.

Specifications

Series - Transistor Type NPN
Current - Collector (Ic) (Max) 700 mA Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 2V Power - Max 800 mW
Frequency - Transition 50MHz Operating Temperature 150°C (TJ)
Mounting Type Through Hole Base Product Number KSC1008

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Availability: 6281 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $2.668 $2.67
200+ $1.033 $206.60
500+ $0.997 $498.50
1000+ $0.978 $978.00

The prices below are for reference only.

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