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KSA473YTSTUA +BOM

Bipolar (BJT) Transistor PNP 30 V 3 A 100MHz 10 W Through Hole TO-220-3

Manufacturer:

onsemi
Mfr.Part #:

KSA473YTSTUA
Datasheet:

KSA473YTSTUA Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

PNP
Collector- Emitter Voltage VCEO Max:

30 V
Collector- Base Voltage VCBO:

30 V
EDA/CAD Models:

Request Free CAD Models for KSA473YTSTUA

Email: [email protected]

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Tel: +852 95804164

KSA473YTSTUA General Description

The PNP Epitaxial Silicon Transistor is designed for use in amplifier and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Key Features

Collector Current: I_C= -3 A
Collector Dissipation: P_C= 10 W (T_C=25°C)
Complement to KSC1173

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Collector- Emitter Voltage VCEO Max	30 V
Collector- Base Voltage VCBO	30 V	Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	300 mV	Pd - Power Dissipation	10 W
Gain Bandwidth Product fT	100 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	DC Current Gain hFE Max	240
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	2000
Subcategory	Transistors	Technology	Si
Unit Weight	0.080072 oz