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KSA1015YTA

PNP Epitaxial Silicon Transistor

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

Key Features

  • Low Frequency Amplifier
  • Collector-Base Voltage : VCBO = -50V
  • Complement to KSC1815

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 100 mV
Maximum DC Collector Current 150 mA Pd - Power Dissipation 400 mW
Gain Bandwidth Product fT 80 MHz Minimum Operating Temperature -
Maximum Operating Temperature + 150 C Series KSA1015
Continuous Collector Current - 150 mA DC Collector/Base Gain hfe Min 70
DC Current Gain hFE Max 400 Height 4.7 mm
Length 4.7 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 2000 Subcategory Transistors
Technology Si Width 3.93 mm
Part # Aliases KSA1015YTA_NL Unit Weight 0.008466 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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