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See Technical Specifications

KAI-1010-ABA-CD-BA +BOM

Interline Transfer CCD Image Sensor, 1 MP

Manufacturer:

onsemi
Mfr.Part #:

KAI-1010-ABA-CD-BA
Datasheet:

KAI-1010-ABA-CD-BA Datasheet (PDF)
Type:

CCD
Pixel Size:

9µm x 9µm
Active Pixel Array:

1008H x 1018V
Frames per Second:

30
EDA/CAD Models:

Request Free CAD Models for KAI-1010-ABA-CD-BA

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

KAI-1010-ABA-CD-BA General Description

EOL has been announced for this device

The KAI-1010 Image Sensor is a high-resolution monochrome charge coupled device (CCD) device whose non-interlaced architecture makes it ideally suited for video, electronic still and motion/still camera applications. The device is built using an advanced true two-phase, double-polysilicon, NMOS CCD technology. The p+npn- photodetector elements eliminate image lag and reduce image smear while providing antiblooming protection and electronic-exposure control. The total chip size is 10.15 (H) mm x 10.00 (V) mm.

Key Features

Front Illuminated Interline Architecture
Progressive Scan (Non-interlaced)
Electronic Shutter
On-Chip Dark Reference Pixels
Low Dark Current
High Sensitivity Output Structure
Dual Output Shift Registers
Antiblooming Protection
Low Smear (0.01% with microlens)

Application

Machine Vision

Specifications

Series	-	Type	CCD
Pixel Size	9µm x 9µm	Active Pixel Array	1008H x 1018V
Frames per Second	30	Voltage - Supply	12V ~ 15V
Operating Temperature	-50°C ~ 70°C (TA)	Base Product Number	KAI-1010