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See Technical Specifications

K4B4G1646E-BYMATCV

DDR3L SDRAM Chip

Manufacturer: Samsung Electronics
Mfr.Part #: K4B4G1646E-BYMATCV
Datasheet: K4B4G1646E-BYMATCV Datasheet (PDF)
ECCN (US): EAR99
Automotive: No
PPAP: No
DRAM Type: DDR3L SDRAM
EDA/CAD Models: Request Free CAD Models for K4B4G1646E-BYMATCV

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Avaq Semiconductor offers the highly versatile and reliable K4B4G1646E-BYMATCV driver, produced by Samsung Electronics. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the K4B4G1646E-BYMATCV.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

ECCN (US)	EAR99	Part Status	Active
Automotive	No	PPAP	No
DRAM Type	DDR3L SDRAM	Chip Density (bit)	4G
Organization	256Mx16	Number of Internal Banks	8
Number of Words per Bank	32M	Number of Bits/Word (bit)	16
Data Bus Width (bit)	16	Maximum Clock Rate (MHz)	1866
Maximum Access Time (ns)	0.195	Address Bus Width (bit)	18
Minimum Operating Supply Voltage (V)	1.283\|1.425	Maximum Operating Supply Voltage (V)	1.45\|1.575
Operating Current (mA)	131	Minimum Operating Temperature (°C)	0
Maximum Operating Temperature (°C)	95	Supplier Temperature Grade	Commercial
Number of I/O Lines (bit)	16	Mounting	Surface Mount
Package Height	0.73	Package Width	7.5
Package Length	13.3	PCB changed	96
Standard Package Name	BGA	Supplier Package	FBGA
Pin Count	96