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See Technical Specifications

K4B1G0446F-HCH9

DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78,

Manufacturer:

SAMSUNG SEMICONDUCTOR INC
Mfr.Part #:

K4B1G0446F-HCH9
Datasheet:

K4B1G0446F-HCH9 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8542.32.00.32
EDA/CAD Models:

Request Free CAD Models for K4B1G0446F-HCH9

Email: [email protected]

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Avaq Semiconductor offers the highly versatile and reliable K4B1G0446F-HCH9 driver, produced by SAMSUNG SEMICONDUCTOR INC. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the K4B1G0446F-HCH9.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8542.32.00.32	Access Time-Max	0.255 ns
Clock Frequency-Max (fCLK)	667 MHz	I/O Type	COMMON
Interleaved Burst Length	8	JESD-30 Code	R-PBGA-B78
JESD-609 Code	e1	Memory Density	1073741824 bit
Memory IC Type	DDR3 DRAM	Memory Width	4
Moisture Sensitivity Level	3	Number of Terminals	78
Number of Words	268435456 words	Number of Words Code	256000000
Organization	256MX4	Output Characteristics	3-STATE
Peak Reflow Temperature (Cel)	260	Power Supplies	1.5 V
Qualification Status	Not Qualified	Refresh Cycles	8192
Sequential Burst Length	8	Supply Current-Max	0.165 mA
Supply Voltage-Nom (Vsup)	1.5 V	Surface Mount	YES
Technology	CMOS	Terminal Finish	TIN SILVER COPPER
Terminal Form	BALL	Terminal Pitch	0.8 mm
Terminal Position	BOTTOM