This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

JS28F256P33BFE

FLASH - NOR Memory IC 256Mbit Parallel 40 MHz 105 ns 56-TSOP

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

JS28F256P33BFE
Datasheet:

JS28F256P33BFE Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Models:

Request Free CAD Models for JS28F256P33BFE

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

JS28F256P33BFE General Description

FLASH - NOR Memory IC 256Mbit Parallel 40 MHz 105 ns 56-TSOP

Key Features

High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
— 1.8 V buffered programming at 7 µs/byte (Typ)
Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or bottom configuration
— 128-KByte main blocks
Voltage and Power
—VCC(core) voltage: 1.7 V – 2.0 V
—VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (130 nm)
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
64 user-programmable OTP bits
Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
— Absolute write protection: VPP= VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
—Intel® Flash Data Integrator optimized
— Basic Command Set and Extended Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP package
— 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
— 16-bit wide data bus

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	256Mbit	Memory Organization	16M x 16
Memory Interface	Parallel	Clock Frequency	40 MHz
Write Cycle Time - Word, Page	105ns	Access Time	105 ns
Voltage - Supply	2.3V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TC)
Mounting Type	Surface Mount