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JANTXV2N5663

Trans GP BJT NPN 300V 2A 1000mW 3-Pin TO-5 Bag

  • Manufacturer:

    Microchip Technology

  • Mfr.Part #:

    JANTXV2N5663

  • Datasheet:

    JANTXV2N5663 Datasheet (PDF) pdf-icon

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    2 A

  • Voltage - Collector Emitter Breakdown (Max):

    300 V

  • Vce Saturation (Max) @ Ib, Ic:

    800mV @ 400mA, 2A

JANTXV2N5663 General Description

Bipolar (BJT) Transistor NPN 300 V 2 A 1 W Through Hole TO-5

Specifications

Series - Transistor Type NPN
Current - Collector (Ic) (Max) 2 A Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 800mV @ 400mA, 2A Current - Collector Cutoff (Max) 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 500mA, 5V Power - Max 1 W
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Grade Military Qualification MIL-PRF-19500/454
Mounting Type Through Hole Base Product Number 2N5663

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Availability: 8008 PCS

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