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JANTXV2N5663
Trans GP BJT NPN 300V 2A 1000mW 3-Pin TO-5 Bag
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Manufacturer:
Microchip Technology
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Mfr.Part #:
JANTXV2N5663
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Datasheet:
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Transistor Type:
NPN
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Current - Collector (Ic) (Max):
2 A
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Voltage - Collector Emitter Breakdown (Max):
300 V
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Vce Saturation (Max) @ Ib, Ic:
800mV @ 400mA, 2A
Availability: 8008 PCS
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JANTXV2N5663 General Description
Bipolar (BJT) Transistor NPN 300 V 2 A 1 W Through Hole TO-5
Specifications
Series | - | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 2 A | Voltage - Collector Emitter Breakdown (Max) | 300 V |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 400mA, 2A | Current - Collector Cutoff (Max) | 200nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 500mA, 5V | Power - Max | 1 W |
Frequency - Transition | - | Operating Temperature | -65°C ~ 200°C (TJ) |
Grade | Military | Qualification | MIL-PRF-19500/454 |
Mounting Type | Through Hole | Base Product Number | 2N5663 |
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Availability: 8008 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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