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JANTX2N2222A

Small signal bipolar transistor with 0.8A collector current and 50V breakdown voltage

Manufacturer:

Micro Crystal
Mfr.Part #:

JANTX2N2222A
Datasheet:

JANTX2N2222A Datasheet (PDF)
Series:

Military, MIL-PRF-19500/255
Transistor Type:

NPN
Current - Collector (Ic) (Max):

800 mA
Voltage - Collector Emitter Breakdown (Max):

50 V
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JANTX2N2222A General Description

The JANTX2N2222A is a part number for a high-reliability, military-grade, or JAN (Joint Army-Navy) qualified version of the commonly used 2N2222A NPN bipolar junction transistor (BJT). The 2N2222A is a small-signal NPN transistor used in a wide range of electronic circuits.

Application

High-Reliability
Small-Signal Amplification
Switching
Oscillators
Signal Processing
Amateur Radio
Legacy and Replacement

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	Military, MIL-PRF-19500/255
Transistor Type	NPN	Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Current - Collector Cutoff (Max)	50nA	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Power - Max	500 mW	Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)	Mounting Type	Through Hole
Base Product Number	2N2222	Product Category:	Bipolar Transistors - BJT
Mounting Style:	Through Hole	Transistor Polarity:	NPN
Configuration:	Single	Collector- Emitter Voltage VCEO Max:	50 V
Collector- Base Voltage VCBO:	75 V	Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	300 mV	Maximum DC Collector Current:	800 mA
Pd - Power Dissipation:	500 mW	Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 200 C	Continuous Collector Current:	800 mA
DC Collector/Base Gain hfe Min:	50	Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	338	Subcategory:	Transistors
Technology:	Si