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IXYN75N65C3D1 +BOM

IGBT 650 V 150 A 600 W Chassis Mount SOT-227B

IXYN75N65C3D1 General Description

IGBT 650 V 150 A 600 W Chassis Mount SOT-227B

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Screw Mounts Configuration Single
Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 150 A
Pd - Power Dissipation 600 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Continuous Collector Current Ic Max 360 A
Gate-Emitter Leakage Current 100 nA Product Type IGBT Transistors
Factory Pack Quantity 10 Subcategory IGBTs

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