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IXYK120N120C3

N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 1200V, 220A, 1500W, TO-264 Package

Manufacturer:

Ixys
Mfr.Part #:

IXYK120N120C3
Datasheet:

IXYK120N120C3 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for IXYK120N120C3

Email: [email protected]

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Tel: +852 95804164

IXYK120N120C3 General Description

IXYK120N120C3 is a high-performance insulated gate bipolar transistor (IGBT) module designed for industrial applications. It has a voltage rating of 1200V and a current rating of 120A, making it suitable for switching high power loads. The module features a compact and lightweight design, making it easy to integrate into various systems.The IXYK120N120C3 module has low conduction and switching losses, resulting in improved efficiency and reduced heat generation. This allows for higher power density and better thermal performance. It also has a low on-state voltage drop, leading to lower power dissipation and improved energy efficiency.The module is equipped with overcurrent and overtemperature protection features, ensuring safe and reliable operation in critical conditions. It also has high reverse recovery di/dt and dv/dt capability, making it suitable for high-speed switching applications.

Key Features

1200V rated
120A continuous collector current
Low Vce(sat) for higher efficiency
Low switching losses
Positive temperature coefficient for easy paralleling
Integrated gate resistor for simplified drive requirements

Application

Industrial motor drives
Solar inverters
Welding equipment
Power supplies
Induction heating systems
Electric vehicle charging systems
Renewable energy systems
Uninterruptible power supplies
Electric traction
Factory automation

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	3.2 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	240 A
Pd - Power Dissipation	1.5 kW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	Planar
Continuous Collector Current Ic Max	240 A	Gate-Emitter Leakage Current	100 nA
Product Type	IGBT Transistors	Factory Pack Quantity	25
Subcategory	IGBTs	Unit Weight	0.373904 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

M**n 08/27/2021

Long walked, but i was not in a hurry. It's okay.

J**e 02/19/2021

Screen working, a little had to really mess with libraries and code

D**n 01/08/2021

Avaq has definitely won me over with their exceptional service! The ZL30143GGG2 components arrived swiftly and were exactly as described. Kudos to Avaq for their top-notch customer experience.

N**o 06/14/2020

Delivery to kiev for 1 week, took to repair the soldering iron-works! Recommended seller and goods!