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IXTX200N10L2
N-Channel 100 V 200A (Tc) 1040W (Tc) Through Hole PLUS247™-3
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Manufacturer:
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Mfr.Part #:
IXTX200N10L2
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Datasheet:
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Part Life Cycle Code:
Active
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Reach Compliance Code:
compliant
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ECCN Code:
EAR99
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Additional Feature:
AVALANCHE RATED
Availability: 6383 PCS
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IXTX200N10L2 General Description
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA).When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C.
Key Features
- Designed for linear operation
- Guaranteed FBSOA at 75°C
- Low on-resistances R
- DS(on)
- Avalanche rated
- International standard packages
- UL 94 V-0 Flammability qualified
- (molding epoxies)
Application
- E-fuses and hot-swap circuits
- Battery management
- Current regulators
- Linear amplifiers
- Fan controllers
- Programmable loads
- Soft-start control
Specifications
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 5000 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 200 A | Drain-source On Resistance-Max | 0.011 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 610 pF |
JESD-30 Code | R-PSIP-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 1040 W |
Pulsed Drain Current-Max (IDM) | 500 A | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | AMPLIFIER | Transistor Element Material | SILICON |
Series | Linear L2™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 200A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 11mOhm @ 100A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 540 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 25 V | Power Dissipation (Max) | 1040W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IXTX200 |
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Availability: 6383 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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