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IXTN36N50 +BOM

Discrete Semiconductor Modules 36 Amps 500V

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

IXTN36N50 General Description

N-Channel 500 V 36A (Tc) 400W (Tc) Chassis Mount SOT-227B

Key Features

  • Designed for Linear Operation
  • International Standard Package
  • Guaranteed FBSOA at 75°C
  • Avalanche Rated
  • Molding Epoxy Meets UL94 V-0 Flammability Classification
  • MiniBLOC with Aluminium Nitride Isolation

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 4 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.12 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4 Number of Elements 1
Number of Terminals 4 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 400 W Power Dissipation-Max (Abs) 350 W
Pulsed Drain Current-Max (IDM) 133 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish NICKEL
Terminal Form UNSPECIFIED Terminal Position UPPER
Transistor Application SWITCHING Transistor Element Material SILICON

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