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See Technical Specifications

IXTH20N60 +BOM

N-Channel 600 V 20A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Manufacturer:

IXYS
Mfr.Part #:

IXTH20N60
Datasheet:

IXTH20N60 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Transferred
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for IXTH20N60

Email: [email protected]

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Tel: +852 95804164

IXTH20N60 General Description

MOSFET, N, TO-247; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.35R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4.5V; Case style:TO-247 (SOT-249); Case style, RoHS Compliant: Yes

Key Features

International standard packages
Fast switching times
Avalanche rated
Rugged Polysilicon Gate Cell structure
Ultra-low R
DS(on)

Application

Capacitor discharge circuits
High voltage power supplies
Pulse circuits
Level shifting
Solid State Relays
Triggers
Advantages:
Easy to mount
Space savings
High power density

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Transferred
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Case Connection	ISOLATED	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	20 A
Drain-source On Resistance-Max	0.35 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247AD	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation Ambient-Max	300 W
Power Dissipation-Max (Abs)	300 W	Pulsed Drain Current-Max (IDM)	80 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	SWITCHING	Transistor Element Material	SILICON