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See Technical Specifications

IXTA3N120 +BOM

IXTA3N120 is a MOSFET with a voltage rating of 1

Manufacturer:

IXYS
Mfr.Part #:

IXTA3N120
Datasheet:

IXTA3N120 Datasheet (PDF)
Drain-Source Voltage (V):

1200
Maximum On-Resistance @ 25 ℃ (Ohm):

4.5
Continuous Drain Current @ 25 ℃ (A):

3
Gate Charge (nC):

42
EDA/CAD Models:

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IXTA3N120 General Description

The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators.

Key Features

International standard packages
Fast switching times
Avalanche rated
Rugged Polysilicon Gate Cell structure
Ultra-low R
DS(on)

Application

Capacitor discharge circuits
High voltage power supplies
Pulse circuits
Level shifting
Solid State Relays
Triggers
Advantages:
Easy to mount
Space savings
High power density

Specifications

Drain-Source Voltage (V)	1200	Maximum On-Resistance @ 25 ℃ (Ohm)	4.5
Continuous Drain Current @ 25 ℃ (A)	3	Gate Charge (nC)	42
Input Capacitance, CISS (pF)	1100	Thermal resistance [junction-case] (K/W)	0.62
Configuration	Single	Typical Reverse Recovery Time (ns)	700
Power Dissipation (W)	200	Sample Request	Yes
Check Stock	Yes

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

E**h 01/15/2022

Thank you.35 days shipping from order time.

I**a 08/19/2021

Avaq's delivery speed and customer service are commendable. I received my batch of ATMEGA162-16AU components promptly and their team was readily available to assist with any queries. A reliable and efficient distributor!

N**n 05/16/2021

Fast shipping, best seller! Works as it should, i recommend.

E**a 02/02/2020

Product was exactly as described, packaged well and arrived in good time