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IXSN52N60AU1
IGBT Transistors 80 Amps 600V 3.0 Rds
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Manufacturer:
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Mfr.Part #:
IXSN52N60AU1
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Datasheet:
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IGBT Type:
PT
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Configuration:
Single
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Voltage - Collector Emitter Breakdown (Max):
600 V
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Current - Collector (Ic) (Max):
80 A
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EDA/CAD Models:
Availability: 6562 PCS
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IXSN52N60AU1 General Description
IGBT Module PT Single 600 V 80 A 250 W Chassis Mount SOT-227B
Key Features
- International standard package miniBLOC
- Aluminium-nitride isolation
- - high power dissipation
- Isolation voltage 3000 V~
- Low VCE(sat)
- - for minimum on-state conduction losses
- Fast RecoveryEpitaxial Diode
- - short trr and IRM
- Low collector-to-case capacitance (<50 pF)
- - reducesd RFI
- Low package inductance (<10 nH)
- - easy to drive and to protect
Specifications
IGBT Type | PT | Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 80 A |
Power - Max | 250 W | Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 40A |
Current - Collector Cutoff (Max) | 750 µA | Input Capacitance (Cies) @ Vce | 4.5 nF @ 25 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Base Product Number | IXSN52 |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Availability: 6562 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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