This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

IXSN52N60AU1

IGBT Transistors 80 Amps 600V 3.0 Rds

IXSN52N60AU1 General Description

IGBT Module PT Single 600 V 80 A 250 W Chassis Mount SOT-227B

Key Features

  • International standard package miniBLOC
  • Aluminium-nitride isolation
  • - high power dissipation
  • Isolation voltage 3000 V~
  • Low VCE(sat)
  • - for minimum on-state conduction losses
  • Fast RecoveryEpitaxial Diode
  • - short trr and IRM
  • Low collector-to-case capacitance (<50 pF)
  • - reducesd RFI
  • Low package inductance (<10 nH)
  • - easy to drive and to protect

Specifications

IGBT Type PT Configuration Single
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 80 A
Power - Max 250 W Vce(on) (Max) @ Vge, Ic 3V @ 15V, 40A
Current - Collector Cutoff (Max) 750 µA Input Capacitance (Cies) @ Vce 4.5 nF @ 25 V
Input Standard NTC Thermistor No
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Base Product Number IXSN52

Service Policies and Others

After-Sales & Settlement Related

payment Payment

Payment Method

hsbc
TT/Wire Transfer
paypal
Paypal
wu
Western Union
mg
Money Gram

For alternative payment channels, please reach out to us at:

[email protected]
shipping Shipping & Packing

Shipping Method

fedex
Fedex
ups
UPS
dhl
DHL
tnt
NTN
Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty

We promise to provide 365 days quality assurance service for all our products.

Reviews

You need to log in to reply. Sign In | Sign Up

Availability: 6562 PCS

+BOM
Qty. Unit Price Ext. Price
1+ - -

The prices below are for reference only.