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IXSN35N120AU1
Electronics Distributor from France Established in 1988
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Manufacturer:
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Mfr.Part #:
IXSN35N120AU1
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Configuration:
Single Dual Emitter
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Collector- Emitter Voltage VCEO Max:
1.2 kV
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EDA/CAD Models:
Availability: 7270 PCS
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IXSN35N120AU1 General Description
IGBT Module PT Single 1200 V 70 A 300 W Chassis Mount SOT-227B
Key Features
- 1200V, 35A IGBT Module
- NPT- Non Punch Through Technology
- Low VCE(sat) for higher efficiency
- Positive temperature Coefficient
- Isolation Voltage of 2500Vrms
- Low thermal resistance
- High short circuit capability
- RoHS compliant
Application
- Power supplies
- Motor control
- Renewable energy systems
- Industrial automation
- Uninterruptible power supplies (UPS)
- Welding equipment
- Switch mode power supplies (SMPS)
- Electric vehicle charging systems
- Server power supplies
- Telecommunication applications
Specifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | SMD/SMT | Configuration | Single Dual Emitter |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | IXSN35N120 | Continuous Collector Current Ic Max | 70 A |
Height | 9.6 mm | Length | 38.23 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 10 |
Subcategory | IGBTs | Width | 25.42 mm |
Unit Weight | 1.058219 oz |
Service Policies and Others
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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We promise to provide 365 days quality assurance service for all our products.
Availability: 7270 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IXSN35N120AU1, guaranteed quotes back within 12hr.
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