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IXGR60N60C2D1
IGBT Transistors 600V
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Manufacturer:
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Mfr.Part #:
IXGR60N60C2D1
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
600 V
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EDA/CAD Models:
Availability: 3059 PCS
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IXGR60N60C2D1 General Description
The IXGR60N60C2D1 is a high power insulated gate bipolar transistor (IGBT) designed for use in power electronics applications. It is capable of handling up to 60A of continuous current and 120A of pulsed current, making it suitable for high power and high voltage applications.This IGBT features a breakdown voltage of 600V, which allows for operation in a wide range of industrial and commercial applications. The IXGR60N60C2D1 also has a low on-state voltage drop of 1.6V, which helps to reduce power losses and improve efficiency in power converter designs.Additionally, this IGBT is equipped with a fast switching speed, with a typical turn-off time of 90ns and a typical turn-on time of 70ns. This enables it to be used in applications requiring fast and precise switching, such as motor drives, inverters, and power supplies.The IXGR60N60C2D1 is housed in a TO-268 package, which provides excellent thermal performance and reliability. It operates over a wide temperature range of -55°C to 175°C, making it suitable for use in harsh environments.
Key Features
- 600V / 60A rated IGBT
- Low VCE(sat) for improved efficiency
- Low EMI
- Soft switching capability
- Positive temperature coefficient VCE(sat)
- CE marked
- High current rating
- High blocking voltage
- ROHS compliant
- Integrated anti-parallel diode
Application
- Motor drives
- Power supplies
- Welding equipment
- Induction heating
- Uninterruptible power supplies (UPS)
- Solar inverters
- Electric vehicle (EV) charging stations
- Switched-mode power supplies (SMPS)
- Resonant converters
Specifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | SMD/SMT | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.7 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | IXGR60N60 |
Continuous Collector Current | 75 A | Continuous Collector Current Ic Max | 75 A |
Height | 21.34 mm | Length | 16.13 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
Subcategory | IGBTs | Width | 5.21 mm |
Unit Weight | 0.186952 oz |
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Availability: 3059 PCS
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